댓글 쓰기 권한이 없습니다. 로그인 하시겠습니까?
2013.12.02 14:38
[Publication: SiC crystal growth]
(*.223.63.117) 조회 수 15905 추천 수 0 댓글 0
'Governing Factors for the Formation of 4H or 6H-SiC Polytype during SiC Crystal Growth: An Atomistic Computational Approach'
Kyung-Han Kang, Taihee Eun, Myong-Chul Jun and Byeong-Joo Lee, accepted for publication by J Crystal Growth
Designed by sketchbooks.co.kr / sketchbook5 board skin
Sketchbook5, 스케치북5
Sketchbook5, 스케치북5
Sketchbook5, 스케치북5
Sketchbook5, 스케치북5