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"Atomistic modeling of III–V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1−xInxN"

Eun Cheol Do, Young-Han Shin and Byeong-Joo Lee, J. Phys.: Condens. Matter 21 (2009) 325801

 

** This N unary parameter is different from the other N parameter used in other 2NNMEAM systems.

 


LAMMPS Examples

for 2NN MEAM

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