Related document:
"Atomistic modeling of III–V nitrides: modified embedded-atom method interatomic potentials for GaN, InN and Ga1−xInxN"
Eun Cheol Do, Young-Han Shin and Byeong-Joo Lee, J. Phys.: Condens. Matter 21 (2009) 325801
** This N unary parameter is different from the other N parameter used in other 2NNMEAM systems.
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