[Publication: SiC crystal growth]

by Byeong-Joo Lee posted Dec 02, 2013

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'Governing Factors for the Formation of 4H or 6H-SiC Polytype during SiC Crystal Growth: An Atomistic Computational Approach'

Kyung-Han Kang, Taihee Eun, Myong-Chul Jun and Byeong-Joo Lee, accepted for publication by J Crystal Growth

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